IPD60R1K5PFD7SAUMA1 Infineon Technologies
auf Bestellung 93513 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1231+ | 0.44 EUR |
| 10000+ | 0.38 EUR |
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Technische Details IPD60R1K5PFD7SAUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 3.6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V, Power Dissipation (Max): 22W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 40µA, Supplier Device Package: PG-TO252-3-344, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V.
Weitere Produktangebote IPD60R1K5PFD7SAUMA1 nach Preis ab 0.35 EUR bis 1.8 EUR
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IPD60R1K5PFD7SAUMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 25790 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R1K5PFD7SAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 31353 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R1K5PFD7SAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3235 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R1K5PFD7SAUMA1 | Hersteller : Infineon Technologies |
MOSFETs CONSUMER |
auf Bestellung 2185 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R1K5PFD7SAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 3.6A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 40µA Supplier Device Package: PG-TO252-3-344 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V |
auf Bestellung 2422 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD60R1K5PFD7SAUMA1 | Hersteller : Infineon Technologies |
SP004748872 |
Produkt ist nicht verfügbar |
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IPD60R1K5PFD7SAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD60R1K5PFD7SAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD60R1K5PFD7SAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 3.6A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 40µA Supplier Device Package: PG-TO252-3-344 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V |
Produkt ist nicht verfügbar |
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| IPD60R1K5PFD7SAUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A Type of transistor: N-MOSFET Kind of channel: enhancement Version: ESD Polarisation: unipolar Mounting: SMD On-state resistance: 2.892Ω Drain current: 2.2A Pulsed drain current: 6A Power dissipation: 22W Gate-source voltage: ±20V Technology: CoolMOS™ PFD7 Drain-source voltage: 600V Case: TO252 |
Produkt ist nicht verfügbar |