IPD60R280CFD7 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Anzahl je Verpackung: 1 Stücke
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Technische Details IPD60R280CFD7 INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3, Type of transistor: N-MOSFET, Technology: OptiMOS™, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 6A, Power dissipation: 51W, Case: PG-TO252-3, Gate-source voltage: ±20V, On-state resistance: 0.536Ω, Mounting: SMD, Kind of channel: enhancement, Gate charge: 18nC, Anzahl je Verpackung: 1 Stücke.
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IPD60R280CFD7 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 51W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.536Ω Mounting: SMD Kind of channel: enhancement Gate charge: 18nC |
Produkt ist nicht verfügbar |