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IPD60R280CFD7

IPD60R280CFD7 INFINEON TECHNOLOGIES

IPD60R280CFD7.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
On-state resistance: 0.536Ω
Mounting: SMD
Power dissipation: 51W
Gate charge: 18nC
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
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Technische Details IPD60R280CFD7 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3, Type of transistor: N-MOSFET, On-state resistance: 0.536Ω, Mounting: SMD, Power dissipation: 51W, Gate charge: 18nC, Polarisation: unipolar, Technology: OptiMOS™, Drain current: 6A, Kind of channel: enhancement, Drain-source voltage: 600V, Gate-source voltage: ±20V, Case: PG-TO252-3.