IPD60R280P7S Infineon Technologies
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 90+ | 1.66 EUR |
| 100+ | 1.53 EUR |
| 250+ | 1.41 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.21 EUR |
| 2500+ | 1.13 EUR |
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Technische Details IPD60R280P7S Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD, Type of transistor: N-MOSFET, Technology: CoolMOS™ P7, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 8A, Power dissipation: 53W, Case: PG-TO252-3, Gate-source voltage: ±20V, On-state resistance: 0.28Ω, Mounting: SMD, Kind of channel: enhancement, Version: ESD, Gate charge: 18nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPD60R280P7S
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPD60R280P7S | Hersteller : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 53W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhancement Version: ESD Gate charge: 18nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPD60R280P7S | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 53W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhancement Version: ESD Gate charge: 18nC |
Produkt ist nicht verfügbar |