IPD60R360P7ATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 190+ | 0.76 EUR |
| 193+ | 0.72 EUR |
| 196+ | 0.69 EUR |
| 250+ | 0.65 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.58 EUR |
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Technische Details IPD60R360P7ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 4V @ 140µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400.
Weitere Produktangebote IPD60R360P7ATMA1 nach Preis ab 0.55 EUR bis 2.87 EUR
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IPD60R360P7ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1992 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R360P7ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 9A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R360P7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1413 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R360P7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R360P7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 12029 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R360P7ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 9A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400 |
auf Bestellung 13966 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R360P7ATMA1 | Hersteller : Infineon Technologies |
MOSFETs LOW POWER_NEW |
auf Bestellung 4125 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R360P7ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPD60R360P7ATMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 9 A, 0.305 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 41W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.305ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1680 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R360P7ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPD60R360P7ATMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 9 A, 0.305 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 41W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.305ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1680 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R360P7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD60R360P7ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 41W Case: PG-TO252-3 On-state resistance: 0.36Ω Mounting: SMD Gate charge: 13nC Kind of channel: enhancement Technology: CoolMOS™ P7 Gate-source voltage: ±20V Version: ESD |
Produkt ist nicht verfügbar |