IPD60R360P7SE8228AUMA1 Infineon Technologies
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.54 EUR |
| 5000+ | 0.48 EUR |
| 10000+ | 0.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD60R360P7SE8228AUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 4V @ 140µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V.
Weitere Produktangebote IPD60R360P7SE8228AUMA1 nach Preis ab 0.41 EUR bis 2.08 EUR
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IPD60R360P7SE8228AUMA1 | Hersteller : Infineon Technologies |
 600V Cool MOS P7 Power Transistor |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R360P7SE8228AUMA1 | Hersteller : Infineon Technologies |
600V Cool MOS P7 Power Transistor |
auf Bestellung 1760 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R360P7SE8228AUMA1 | Hersteller : Infineon Technologies |
600V Cool MOS P7 Power Transistor |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R360P7SE8228AUMA1 | Hersteller : Infineon Technologies |
600V Cool MOS P7 Power Transistor |
auf Bestellung 29148 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R360P7SE8228AUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 9A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V |
auf Bestellung 2324 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD60R360P7SE8228AUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD60R360P7SE8228AUMA1 | Hersteller : Infineon Technologies |
SP002367806 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R360P7SE8228AUMA1 | Hersteller : Infineon Technologies |
600V Cool MOS P7 Power Transistor |
Produkt ist nicht verfügbar |
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IPD60R360P7SE8228AUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 9A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V |
Produkt ist nicht verfügbar |
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| IPD60R360P7SE8228AUMA1 | Hersteller : Infineon Technologies |
MOSFETs CONSUMER |
Produkt ist nicht verfügbar |