IPD60R385CPATMA1 Infineon Technologies
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.24 EUR |
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Technische Details IPD60R385CPATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 340µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V.
Weitere Produktangebote IPD60R385CPATMA1 nach Preis ab 1 EUR bis 3.59 EUR
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IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 600V 9A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 340µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1288 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 596 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 600V 9A DPAK-2 |
auf Bestellung 1726 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 9A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 340µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V |
auf Bestellung 2931 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R385CPATMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPD60R385CPATMA1 - IPD60R385 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| IPD60R385CPATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252 Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Mounting: SMD On-state resistance: 0.385Ω Drain current: 5.7A Pulsed drain current: 27A Power dissipation: 83W Gate-source voltage: ±20V Technology: CoolMOS™ CP Drain-source voltage: 600V Case: PG-TO252 |
Produkt ist nicht verfügbar |