IPD60R385CPATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 2500+ | 1.29 EUR |
| 5000+ | 1.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD60R385CPATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 340µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V.
Weitere Produktangebote IPD60R385CPATMA1 nach Preis ab 1.23 EUR bis 4.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 9A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 340µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V |
auf Bestellung 27500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1325 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 600V 9A DPAK-2 |
auf Bestellung 381 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 9A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 340µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V |
auf Bestellung 29946 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
IPD60R385CPATMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPD60R385CPATMA1 - IPD60R385 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
|
IPD60R385CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
| IPD60R385CPATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Power dissipation: 83W Case: PG-TO252 On-state resistance: 0.385Ω Mounting: SMD Kind of channel: enhancement Technology: CoolMOS™ CP Pulsed drain current: 27A Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |