IPD60R3K4CEAUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 600V 2.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.3 EUR |
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Technische Details IPD60R3K4CEAUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 2.6A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V, Power Dissipation (Max): 29W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 40µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V.
Weitere Produktangebote IPD60R3K4CEAUMA1 nach Preis ab 0.22 EUR bis 1.25 EUR
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IPD60R3K4CEAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 2.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 37500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R3K4CEAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 2.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 37500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R3K4CEAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 2.6A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V |
auf Bestellung 3303 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R3K4CEAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 2.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 70000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD60R3K4CEAUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 600V; 2.6A; 29W; DPAK; SMT Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: N Mounting: SMD Electrical mounting: SMT Gate charge: 4.6nC On-state resistance: 3.17Ω Drain current: 2.6A Power dissipation: 29W Gate-source voltage: 20V Technology: MOSFET Drain-source voltage: 600V Case: DPAK |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD60R3K4CEAUMA1 | Hersteller : Infineon |
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auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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IPD60R3K4CEAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 2.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD60R3K4CEAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 2.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD60R3K4CEAUMA1 | Hersteller : Infineon Technologies |
MOSFETs CONSUMER |
Produkt ist nicht verfügbar |