IPD60R3K4CEAUMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 2500+ | 0.21 EUR |
| 5000+ | 0.19 EUR |
| 7500+ | 0.18 EUR |
| 12500+ | 0.17 EUR |
| 17500+ | 0.16 EUR |
| 25000+ | 0.15 EUR |
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Technische Details IPD60R3K4CEAUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 2.6A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V, Power Dissipation (Max): 29W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 40µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V.
Weitere Produktangebote IPD60R3K4CEAUMA1 nach Preis ab 0.15 EUR bis 1.16 EUR
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IPD60R3K4CEAUMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 2.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R3K4CEAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 2.6A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R3K4CEAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 2.6A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V |
auf Bestellung 3116 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD60R3K4CEAUMA1 | Hersteller : Infineon |
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auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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IPD60R3K4CEAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 2.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD60R3K4CEAUMA1 | Hersteller : Infineon Technologies |
MOSFETs CONSUMER |
Produkt ist nicht verfügbar |
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| IPD60R3K4CEAUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; 29W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Power dissipation: 29W Case: DPAK; TO252 On-state resistance: 3.17Ω Mounting: SMD Gate charge: 4.6nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |