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IPD60R400CEAUMA1 Infineon Technologies


Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 14.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.78 EUR
5000+0.73 EUR
7500+0.7 EUR
12500+0.67 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPD60R400CEAUMA1 Infineon Technologies

Description: MOSFET N-CH 600V 14.7A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V, Power Dissipation (Max): 112W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 300µA, Supplier Device Package: PG-TO252-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V.

Weitere Produktangebote IPD60R400CEAUMA1 nach Preis ab 0.64 EUR bis 2.9 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPD60R400CEAUMA1 IPD60R400CEAUMA1 Infineon Technologies Infineon_IPD60R400CE_DS_v02_02_EN.pdf MOSFETs CONSUMER
auf Bestellung 4025 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.52 EUR
10+1.59 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
2500+0.68 EUR
5000+0.64 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R400CEAUMA1 IPD60R400CEAUMA1 Infineon Technologies Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c Description: MOSFET N-CH 600V 14.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 17051 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.9 EUR
10+1.83 EUR
100+1.22 EUR
500+0.96 EUR
1000+0.87 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R400CEAUMA1 Infineon_IPD60R400CE_DS_v02_02_EN.pdf
Hersteller: Infineon Technologies
MOSFETs CONSUMER
auf Bestellung 4025 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.52 EUR
10+1.59 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
2500+0.68 EUR
5000+0.64 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R400CEAUMA1 Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 14.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 17051 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.9 EUR
10+1.83 EUR
100+1.22 EUR
500+0.96 EUR
1000+0.87 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH