 
IPD60R460CEAUMA1 Infineon Technologies
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis | 
|---|---|
| 618+ | 0.88 EUR | 
| 1000+ | 0.78 EUR | 
| 10000+ | 0.67 EUR | 
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD60R460CEAUMA1 Infineon Technologies
Description: CONSUMER, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.1A (Tj), Rds On (Max) @ Id, Vgs: 460mOhm @ 3.4A, 10V, Power Dissipation (Max): 74W, Vgs(th) (Max) @ Id: 3.5V @ 280µA, Supplier Device Package: PG-TO252-3-344, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V. 
Weitere Produktangebote IPD60R460CEAUMA1 nach Preis ab 0.78 EUR bis 2.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | IPD60R460CEAUMA1 | Hersteller : Infineon Technologies |  Trans MOSFET N-CH 600V 13.1A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 5000 Stücke:Lieferzeit 14-21 Tag (e) | 
 | ||||||||||||||||
|   | IPD60R460CEAUMA1 | Hersteller : Infineon Technologies |  Trans MOSFET N-CH 600V 13.1A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2500 Stücke:Lieferzeit 14-21 Tag (e) | 
 | ||||||||||||||||
|   | IPD60R460CEAUMA1 | Hersteller : Infineon Technologies |  Trans MOSFET N-CH 600V 13.1A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2500 Stücke:Lieferzeit 14-21 Tag (e) | 
 | ||||||||||||||||
|   | IPD60R460CEAUMA1 | Hersteller : Infineon Technologies |  MOSFET CONSUMER | auf Bestellung 2154 Stücke:Lieferzeit 10-14 Tag (e) | 
 | ||||||||||||||||
| IPD60R460CEAUMA1 | Hersteller : ROCHESTER ELECTRONICS |  Description: ROCHESTER ELECTRONICS - IPD60R460CEAUMA1 - IPD60R460 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2500 Stücke:Lieferzeit 14-21 Tag (e) | ||||||||||||||||||
|  | IPD60R460CEAUMA1 | Hersteller : Infineon Technologies |  Trans MOSFET N-CH 600V 13.1A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
|   | IPD60R460CEAUMA1 | Hersteller : Infineon Technologies |  Description: CONSUMER Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.1A (Tj) Rds On (Max) @ Id, Vgs: 460mOhm @ 3.4A, 10V Power Dissipation (Max): 74W Vgs(th) (Max) @ Id: 3.5V @ 280µA Supplier Device Package: PG-TO252-3-344 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V | Produkt ist nicht verfügbar |