IPD60R600CM8XTMA1 Infineon Technologies
auf Bestellung 1460 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 107+ | 1.36 EUR |
| 127+ | 1.1 EUR |
| 142+ | 0.95 EUR |
| 250+ | 0.85 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD60R600CM8XTMA1 Infineon Technologies
Description: IPD60R600CM8XTMA1, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tj), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V, Power Dissipation (Max): 64W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 40µA, Supplier Device Package: PG-TO252-3-313, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V.
Weitere Produktangebote IPD60R600CM8XTMA1 nach Preis ab 0.51 EUR bis 1.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPD60R600CM8XTMA1 | Hersteller : Infineon Technologies |
Description: IPD60R600CM8XTMA1 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tj) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 40µA Supplier Device Package: PG-TO252-3-313 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V |
auf Bestellung 226 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IPD60R600CM8XTMA1 | Hersteller : Infineon Technologies |
 MOSFETs LOW POWER_NEW |
auf Bestellung 2222 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
IPD60R600CM8XTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1460 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
IPD60R600CM8XTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| IPD60R600CM8XTMA1 | Hersteller : Infineon Technologies |
MOSFET Power Transistor |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
IPD60R600CM8XTMA1 | Hersteller : Infineon Technologies |
Description: IPD60R600CM8XTMA1 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tj) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 40µA Supplier Device Package: PG-TO252-3-313 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V |
Produkt ist nicht verfügbar |