IPD60R600P7SAUMA1 Infineon Technologies
auf Bestellung 85000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.31 EUR |
| 5000+ | 0.3 EUR |
| 7500+ | 0.28 EUR |
| 12500+ | 0.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD60R600P7SAUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 80µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400.
Weitere Produktangebote IPD60R600P7SAUMA1 nach Preis ab 0.25 EUR bis 1.46 EUR
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IPD60R600P7SAUMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 85000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 6A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400 |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R600P7SAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3 Type of transistor: N-MOSFET Kind of channel: enhancement Version: ESD Polarisation: unipolar Mounting: SMD Gate charge: 9nC On-state resistance: 0.6Ω Drain current: 4A Pulsed drain current: 16A Power dissipation: 30W Gate-source voltage: ±20V Technology: CoolMOS™ P7 Drain-source voltage: 600V Case: PG-TO252-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2252 Stücke: Lieferzeit 7-14 Tag (e) |
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IPD60R600P7SAUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3 Type of transistor: N-MOSFET Kind of channel: enhancement Version: ESD Polarisation: unipolar Mounting: SMD Gate charge: 9nC On-state resistance: 0.6Ω Drain current: 4A Pulsed drain current: 16A Power dissipation: 30W Gate-source voltage: ±20V Technology: CoolMOS™ P7 Drain-source voltage: 600V Case: PG-TO252-3 |
auf Bestellung 2252 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Hersteller : Infineon Technologies |
MOSFETs CONSUMER |
auf Bestellung 1415 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R600P7SAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 6A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400 |
auf Bestellung 22032 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R600P7SAUMA1 | Hersteller : INFINEON |
Description: INFINEON - IPD60R600P7SAUMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 6 A, 0.6 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 30W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.6ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 2262 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Hersteller : INFINEON |
Description: INFINEON - IPD60R600P7SAUMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 6 A, 0.6 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 30W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.6ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 2262 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD60R600P7SAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |