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IPD60R600P7SAUMA1

IPD60R600P7SAUMA1 Infineon Technologies

Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.52 EUR
5000+0.48 EUR
7500+0.46 EUR
12500+0.43 EUR
17500+0.42 EUR
25000+0.41 EUR
Mindestbestellmenge: 2500 Stücke
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Technische Details IPD60R600P7SAUMA1 Infineon Technologies

Description: MOSFET N-CH 600V 6A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 80µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400.

Weitere Produktangebote IPD60R600P7SAUMA1 nach Preis ab 0.36 EUR bis 2.04 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPD60R600P7SAUMA1 IPD60R600P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Drain current: 4A
Pulsed drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 30W
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Case: PG-TO252-3
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 0.6Ω
auf Bestellung 2095 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
88+0.81 EUR
125+0.58 EUR
144+0.5 EUR
500+0.42 EUR
Mindestbestellmenge: 60 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R600P7SAUMA1 IPD60R600P7SAUMA1 Infineon Technologies Infineon_IPD60R600P7S_DataSheet_v02_02_EN.pdf MOSFETs CONSUMER
auf Bestellung 3778 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.47 EUR
10+1 EUR
100+0.67 EUR
500+0.51 EUR
1000+0.47 EUR
2500+0.39 EUR
5000+0.36 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R600P7SAUMA1 IPD60R600P7SAUMA1 Infineon Technologies Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
auf Bestellung 36202 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.04 EUR
14+1.27 EUR
100+0.83 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 9 Stücke
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IPD60R600P7SAUMA1 Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c
IPD60R600P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Drain current: 4A
Pulsed drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 30W
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Case: PG-TO252-3
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 0.6Ω
auf Bestellung 2095 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
60+1.2 EUR
88+0.81 EUR
125+0.58 EUR
144+0.5 EUR
500+0.42 EUR
Mindestbestellmenge: 60 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R600P7SAUMA1 Infineon_IPD60R600P7S_DataSheet_v02_02_EN.pdf
IPD60R600P7SAUMA1
Hersteller: Infineon Technologies
MOSFETs CONSUMER
auf Bestellung 3778 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.47 EUR
10+1 EUR
100+0.67 EUR
500+0.51 EUR
1000+0.47 EUR
2500+0.39 EUR
5000+0.36 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R600P7SAUMA1 Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c
IPD60R600P7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
auf Bestellung 36202 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.04 EUR
14+1.27 EUR
100+0.83 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH