IPD60R600P7SAUMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.38 EUR |
| 5000+ | 0.37 EUR |
| 7500+ | 0.36 EUR |
| 12500+ | 0.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD60R600P7SAUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 80µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400.
Weitere Produktangebote IPD60R600P7SAUMA1 nach Preis ab 0.32 EUR bis 3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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IPD60R600P7SAUMA1 | Infineon Technologies |
 Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 47500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3495 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 47500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 6A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400 |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R600P7SAUMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3 Type of transistor: N-MOSFET On-state resistance: 0.6Ω Mounting: SMD Pulsed drain current: 16A Power dissipation: 30W Gate charge: 9nC Polarisation: unipolar Version: ESD Technology: CoolMOS™ P7 Drain current: 4A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±20V Case: PG-TO252-3 |
auf Bestellung 2095 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1380 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1380 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1380 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 6A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400 |
auf Bestellung 35974 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R600P7SAUMA1 | Infineon Technologies |
MOSFETs CONSUMER |
auf Bestellung 12751 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R600P7SAUMA1 | INFINEON |
Description: INFINEON - IPD60R600P7SAUMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 6 A, 0.6 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 3 - 168 Stunden Gate-Source-Schwellenspannung, max.: 3.5V Verlustleistung: 30W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.6ohm |
auf Bestellung 997 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600P7SAUMA1 | INFINEON |
Description: INFINEON - IPD60R600P7SAUMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 6 A, 0.6 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 3 - 168 Stunden Gate-Source-Schwellenspannung, max.: 3.5V Verlustleistung: 30W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.6ohm |
auf Bestellung 997 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD60R600P7SAUMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.42 EUR |
| 5000+ | 0.4 EUR |
| 10000+ | 0.37 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 35000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.42 EUR |
| 5000+ | 0.36 EUR |
| 12500+ | 0.35 EUR |
| 25000+ | 0.33 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 47500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.45 EUR |
| 5000+ | 0.36 EUR |
| 7500+ | 0.35 EUR |
| 12500+ | 0.33 EUR |
| 17500+ | 0.32 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.5 EUR |
| 5000+ | 0.46 EUR |
| 10000+ | 0.43 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 3495 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1181+ | 0.55 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.56 EUR |
| 5000+ | 0.5 EUR |
| 7500+ | 0.48 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.56 EUR |
| 5000+ | 0.5 EUR |
| 7500+ | 0.45 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 47500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.57 EUR |
| 5000+ | 0.5 EUR |
| 7500+ | 0.46 EUR |
| 12500+ | 0.43 EUR |
| 17500+ | 0.39 EUR |
| 25000+ | 0.37 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.58 EUR |
| 5000+ | 0.55 EUR |
| 7500+ | 0.52 EUR |
| 12500+ | 0.49 EUR |
| 17500+ | 0.48 EUR |
| 25000+ | 0.46 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 134+ | 1.31 EUR |
| 157+ | 1.09 EUR |
| 193+ | 0.87 EUR |
| 204+ | 0.81 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.61 EUR |
| 2500+ | 0.52 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
On-state resistance: 0.6Ω
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 30W
Gate charge: 9nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
On-state resistance: 0.6Ω
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 30W
Gate charge: 9nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
auf Bestellung 2095 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 1.43 EUR |
| 88+ | 0.96 EUR |
| 125+ | 0.69 EUR |
| 144+ | 0.6 EUR |
| 500+ | 0.5 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 101+ | 1.74 EUR |
| 145+ | 1.18 EUR |
| 210+ | 0.8 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.55 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 101+ | 1.74 EUR |
| 148+ | 1.14 EUR |
| 209+ | 0.77 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.5 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 101+ | 1.74 EUR |
| 145+ | 1.15 EUR |
| 210+ | 0.77 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.5 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
auf Bestellung 35974 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.28 EUR |
| 15+ | 1.43 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.67 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: Infineon Technologies
MOSFETs CONSUMER
MOSFETs CONSUMER
auf Bestellung 12751 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.37 EUR |
| 10+ | 1.39 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.69 EUR |
| 2500+ | 0.57 EUR |
| 5000+ | 0.51 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: INFINEON
Description: INFINEON - IPD60R600P7SAUMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 6 A, 0.6 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 3 - 168 Stunden
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 30W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolMOS P7
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.6ohm
Description: INFINEON - IPD60R600P7SAUMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 6 A, 0.6 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 3 - 168 Stunden
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 30W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolMOS P7
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.6ohm
auf Bestellung 997 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 3 EUR |
| 128+ | 1.82 EUR |
| 194+ | 1.11 EUR |
| 500+ | 0.87 EUR |
| IPD60R600P7SAUMA1 |
|
Hersteller: INFINEON
Description: INFINEON - IPD60R600P7SAUMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 6 A, 0.6 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 3 - 168 Stunden
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 30W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolMOS P7
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.6ohm
Description: INFINEON - IPD60R600P7SAUMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 6 A, 0.6 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 3 - 168 Stunden
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 30W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolMOS P7
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.6ohm
auf Bestellung 997 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 3 EUR |
| 128+ | 1.82 EUR |
| 194+ | 1.11 EUR |
| 500+ | 0.87 EUR |