IPD60R750E6ATMA1 Infineon Technologies
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Technische Details IPD60R750E6ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 5.7A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 170µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V.
Weitere Produktangebote IPD60R750E6ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPD60R750E6ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD60R750E6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD60R750E6ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 5.7A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 170µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V |
Produkt ist nicht verfügbar |