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IPD650P06NMATMA1 Infineon Technologies


Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.88 EUR
5000+0.83 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPD650P06NMATMA1 Infineon Technologies

Description: MOSFET P-CH 60V 22A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.04mA, Supplier Device Package: PG-TO252-3-313, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V.

Weitere Produktangebote IPD650P06NMATMA1 nach Preis ab 0.96 EUR bis 3.36 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPD650P06NMATMA1 IPD650P06NMATMA1 Infineon Technologies Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1 Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 6946 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.1 EUR
10+1.98 EUR
100+1.34 EUR
500+1.07 EUR
1000+1.01 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD650P06NMATMA1 IPD650P06NMATMA1 Infineon Technologies Infineon_IPD650P06NM_DS_v02_00_EN.pdf MOSFETs IFX FET > 60-80V
auf Bestellung 1604 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.36 EUR
10+2.16 EUR
100+1.46 EUR
500+1.16 EUR
1000+1.06 EUR
2500+0.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPD650P06NMATMA1 Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 6946 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.1 EUR
10+1.98 EUR
100+1.34 EUR
500+1.07 EUR
1000+1.01 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD650P06NMATMA1 Infineon_IPD650P06NM_DS_v02_00_EN.pdf
Hersteller: Infineon Technologies
MOSFETs IFX FET > 60-80V
auf Bestellung 1604 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.36 EUR
10+2.16 EUR
100+1.46 EUR
500+1.16 EUR
1000+1.06 EUR
2500+0.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH