IPD70N10S312ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 228+ | 0.63 EUR |
| 250+ | 0.59 EUR |
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Technische Details IPD70N10S312ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 70A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 83µA, Supplier Device Package: PG-TO252-3-11, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPD70N10S312ATMA1 nach Preis ab 1.02 EUR bis 4.98 EUR
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IPD70N10S312ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD70N10S312ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD70N10S312ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 70A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 83µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD70N10S312ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 4205 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD70N10S312ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 1345 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD70N10S312ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 1750 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD70N10S312ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 14620 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD70N10S312ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 1769 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD70N10S312ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 1769 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD70N10S312ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 70A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 83µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5460 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD70N10S312ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD70N10S312ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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IPD70N10S312ATMA1 | Hersteller : Infineon Technologies |
MOSFET MOSFET_(75V 120V( |
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| IPD70N10S312ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 48A Pulsed drain current: 280A Power dissipation: 125W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 11.1mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |