IPD70R600CEAUMA1 Infineon Technologies
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 759+ | 0.73 EUR |
| 1000+ | 0.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD70R600CEAUMA1 Infineon Technologies
Description: MOSFET N-CH 700V 10.5A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 210µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V.
Weitere Produktangebote IPD70R600CEAUMA1 nach Preis ab 0.67 EUR bis 2.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IPD70R600CEAUMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 700V 10.5A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 42500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
IPD70R600CEAUMA1 | Hersteller : Infineon Technologies |
MOSFET CONSUMER |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
IPD70R600CEAUMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPD70R600CEAUMA1 - IPD70R600 - 700V, 0.6OHM, N-CHANEL POWER tariffCode: 85412900 euEccn: NLR hazardous: false rohsCompliant: YES productTraceability: No rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
Produkt ist nicht verfügbar |
|||||||||||
 |
IPD70R600CEAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 700V 10.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
 |
IPD70R600CEAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 700V 10.5A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V |
Produkt ist nicht verfügbar |