IPD70R950CEAUMA1 Infineon Technologies
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.75 EUR |
| 5000+ | 0.72 EUR |
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Technische Details IPD70R950CEAUMA1 Infineon Technologies
Description: MOSFET N-CH 700V 7.4A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 150µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V.
Weitere Produktangebote IPD70R950CEAUMA1 nach Preis ab 0.72 EUR bis 0.75 EUR
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IPD70R950CEAUMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 700V 7.4A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD70R950CEAUMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPD70R950CEAUMA1 - IPD70R950 - POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD70R950CEAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 700V 7.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD70R950CEAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 700V 7.4A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPD70R950CEAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 700V 7.4A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPD70R950CEAUMA1 | Hersteller : Infineon Technologies |
MOSFET CONSUMER |
Produkt ist nicht verfügbar |