IPD78CN10NGATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A TO252-3
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 12µA
Power Dissipation (Max): 31W (Tc)
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Technische Details IPD78CN10NGATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 13A TO252-3, Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 4V @ 12µA, Power Dissipation (Max): 31W (Tc).
Weitere Produktangebote IPD78CN10NGATMA1 nach Preis ab 0.43 EUR bis 1.92 EUR
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IPD78CN10NGATMA1 | Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 2885 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD78CN10NGATMA1 | Infineon |
N-MOSFET 100V 13A 31W 78mΩ IDP78CN10NG TO252-3 TIPD78cn10n Anzahl je Verpackung: 25 Stücke |
auf Bestellung 55 Stücke: Lieferzeit 7-14 Tag (e) |
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IPD78CN10NGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 13A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 12µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V |
auf Bestellung 10918 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPD78CN10NGATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
MOSFETs TRENCH >=100V
auf Bestellung 2885 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.85 EUR |
| 10+ | 0.84 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.47 EUR |
| 2500+ | 0.43 EUR |
| IPD78CN10NGATMA1 |
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Hersteller: Infineon
N-MOSFET 100V 13A 31W 78mΩ IDP78CN10NG TO252-3 TIPD78cn10n
Anzahl je Verpackung: 25 Stücke
N-MOSFET 100V 13A 31W 78mΩ IDP78CN10NG TO252-3 TIPD78cn10n
Anzahl je Verpackung: 25 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 1.12 EUR |
| IPD78CN10NGATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
Description: MOSFET N-CH 100V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V
auf Bestellung 10918 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.92 EUR |
| 15+ | 1.2 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |