IPD80P03P4L07ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET P-CH 30V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
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Technische Details IPD80P03P4L07ATMA1 Infineon Technologies
Description: MOSFET P-CH 30V 80A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 2V @ 130µA, Supplier Device Package: PG-TO252-3-11, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPD80P03P4L07ATMA1 nach Preis ab 1.01 EUR bis 3.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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IPD80P03P4L07ATMA1 | Infineon Technologies |
Trans MOSFET P-CH 30V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1691 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD80P03P4L07ATMA1 | ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPD80P03P4L07ATMA1 - IPD80P03 - 20V-150V P-CHANNEL AUTOMOTIVE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 5008 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD80P03P4L07ATMA1 | Infineon Technologies |
MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 |
auf Bestellung 9999 Stücke: Lieferzeit 682-686 Tag (e) |
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IPD80P03P4L07ATMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 80A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 158 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD80P03P4L07ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET P-CH 30V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 30V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1691 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 600+ | 1.08 EUR |
| 1000+ | 1.01 EUR |
| IPD80P03P4L07ATMA1 |
|
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - IPD80P03P4L07ATMA1 - IPD80P03 - 20V-150V P-CHANNEL AUTOMOTIVE
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - IPD80P03P4L07ATMA1 - IPD80P03 - 20V-150V P-CHANNEL AUTOMOTIVE
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 5008 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 435+ | 1.76 EUR |
| IPD80P03P4L07ATMA1 |
|
Hersteller: Infineon Technologies
MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2
MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2
auf Bestellung 9999 Stücke:
Lieferzeit 682-686 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3 EUR |
| 10+ | 2.45 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.32 EUR |
| 2500+ | 1.24 EUR |
| IPD80P03P4L07ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 80A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 158 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.42 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.48 EUR |