IPD80P03P4L07ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET P-CH 30V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1691 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 600+ | 0.92 EUR |
| 1000+ | 0.84 EUR |
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Technische Details IPD80P03P4L07ATMA1 Infineon Technologies
Description: MOSFET P-CH 30V 80A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 2V @ 130µA, Supplier Device Package: PG-TO252-3-11, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPD80P03P4L07ATMA1 nach Preis ab 0.84 EUR bis 3.24 EUR
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IPD80P03P4L07ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 30V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3317 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD80P03P4L07ATMA1 | Hersteller : Infineon Technologies |
MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 |
auf Bestellung 9999 Stücke: Lieferzeit 682-686 Tag (e) |
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IPD80P03P4L07ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 80A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO252-3-11 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 764 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD80P03P4L07ATMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPD80P03P4L07ATMA1 - IPD80P03 - 20V-150V P-CHANNEL AUTOMOTIVE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 5008 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD80P03P4L07ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD80P03P4L07ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 30V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| IPD80P03P4L07ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -65A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -65A Power dissipation: 88W Case: PG-TO252-3-11 Gate-source voltage: -5...16V On-state resistance: 6.8mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS® -P2 Pulsed drain current: -320A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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IPD80P03P4L07ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 80A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO252-3-11 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| IPD80P03P4L07ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -65A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -65A Power dissipation: 88W Case: PG-TO252-3-11 Gate-source voltage: -5...16V On-state resistance: 6.8mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS® -P2 Pulsed drain current: -320A |
Produkt ist nicht verfügbar |