Produkte > INFINEON TECHNOLOGIES > IPD80P03P4L07ATMA2
IPD80P03P4L07ATMA2

IPD80P03P4L07ATMA2 Infineon Technologies

Infineon-IPD80P03P4L-07-DataSheet-v02_01-EN.pdf?fileId=db3a30431ed1d7b2011f366dae693f24
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.82 EUR
5000+0.76 EUR
7500+0.75 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IPD80P03P4L07ATMA2 Infineon Technologies

Description: MOSFET P-CH 30V 80A TO252-31, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 2V @ 130µA, Supplier Device Package: PG-TO252-3-11, Grade: Automotive, Vgs (Max): +5V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote IPD80P03P4L07ATMA2 nach Preis ab 0.79 EUR bis 2.59 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPD80P03P4L07ATMA2 IPD80P03P4L07ATMA2 Infineon Technologies Infineon_IPD80P03P4L_07_DataSheet_v02_01_EN.pdf MOSFETs MOSFET_(20V 40V)
auf Bestellung 21997 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.55 EUR
10+1.64 EUR
100+1.2 EUR
500+0.98 EUR
1000+0.91 EUR
2500+0.79 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD80P03P4L07ATMA2 IPD80P03P4L07ATMA2 Infineon Technologies Infineon-IPD80P03P4L-07-DataSheet-v02_01-EN.pdf?fileId=db3a30431ed1d7b2011f366dae693f24 Description: MOSFET P-CH 30V 80A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 16152 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
11+1.68 EUR
100+1.25 EUR
500+0.99 EUR
1000+0.92 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD80P03P4L07ATMA2 Infineon_IPD80P03P4L_07_DataSheet_v02_01_EN.pdf
IPD80P03P4L07ATMA2
Hersteller: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
auf Bestellung 21997 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.55 EUR
10+1.64 EUR
100+1.2 EUR
500+0.98 EUR
1000+0.91 EUR
2500+0.79 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD80P03P4L07ATMA2 Infineon-IPD80P03P4L-07-DataSheet-v02_01-EN.pdf?fileId=db3a30431ed1d7b2011f366dae693f24
IPD80P03P4L07ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 16152 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.59 EUR
11+1.68 EUR
100+1.25 EUR
500+0.99 EUR
1000+0.92 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH