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IPD80R1K4P7ATMA1

IPD80R1K4P7ATMA1 Infineon Technologies

Infineon-IPD80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9fa098058e5
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.57 EUR
5000+0.52 EUR
7500+0.51 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPD80R1K4P7ATMA1 Infineon Technologies

Description: MOSFET N-CH 800V 4A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 700µA, Supplier Device Package: PG-TO252-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V.

Weitere Produktangebote IPD80R1K4P7ATMA1 nach Preis ab 0.52 EUR bis 2.18 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 Infineon Technologies Infineon-IPD80R1K4P7-DataSheet-v02_03-EN.pdf MOSFETs LOW POWER_NEW
auf Bestellung 3344 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.71 EUR
10+0.65 EUR
2500+0.57 EUR
5000+0.52 EUR
Mindestbestellmenge: 4 Stücke
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IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 INFINEON TECHNOLOGIES IPD80R1K4P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
auf Bestellung 2448 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.36 EUR
77+0.94 EUR
82+0.87 EUR
90+0.8 EUR
109+0.66 EUR
114+0.63 EUR
500+0.57 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 Infineon Technologies Infineon-IPD80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9fa098058e5 Description: MOSFET N-CH 800V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 15209 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.18 EUR
13+1.38 EUR
100+0.92 EUR
500+0.72 EUR
1000+0.65 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R1K4P7ATMA1 Infineon-IPD80R1K4P7-DataSheet-v02_03-EN.pdf
IPD80R1K4P7ATMA1
Hersteller: Infineon Technologies
MOSFETs LOW POWER_NEW
auf Bestellung 3344 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+0.71 EUR
10+0.65 EUR
2500+0.57 EUR
5000+0.52 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R1K4P7ATMA1 IPD80R1K4P7.pdf
IPD80R1K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
auf Bestellung 2448 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
53+1.36 EUR
77+0.94 EUR
82+0.87 EUR
90+0.8 EUR
109+0.66 EUR
114+0.63 EUR
500+0.57 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R1K4P7ATMA1 Infineon-IPD80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9fa098058e5
IPD80R1K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 15209 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.18 EUR
13+1.38 EUR
100+0.92 EUR
500+0.72 EUR
1000+0.65 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH