IPD80R2K8CEATMA1 Infineon Technologies
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.53 EUR |
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Technische Details IPD80R2K8CEATMA1 Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 120µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V.
Weitere Produktangebote IPD80R2K8CEATMA1 nach Preis ab 0.62 EUR bis 2.31 EUR
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IPD80R2K8CEATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 800V 1.9A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 120µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD80R2K8CEATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 4940 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD80R2K8CEATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD80R2K8CEATMA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 800V 1.9A DPAK-2 |
auf Bestellung 9018 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD80R2K8CEATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 800V 1.9A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 120µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V |
auf Bestellung 4845 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD80R2K8CEATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 128 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD80R2K8CEATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2628 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD80R2K8CEATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD80R2K8CEATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |