IPD80R360P7 Infineon Technologies


Infineon_IPD80R360P7_DataSheet_v02_03_EN-3362428.pdf
Hersteller: Infineon Technologies
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Technische Details IPD80R360P7 Infineon Technologies

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD, Type of transistor: N-MOSFET, Technology: CoolMOS™ P7, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 8.6A, Power dissipation: 84W, Case: PG-TO252-3, Gate-source voltage: ±20V, On-state resistance: 0.36Ω, Mounting: SMD, Kind of channel: enhancement, Gate charge: 30nC, Version: ESD.

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IPD80R360P7ATMA1 IPD80R360P7ATMA1 INFINEON TECHNOLOGIES IPD80R360P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R360P7ATMA1 IPD80R360P7.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH