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IPD80R3K3P7ATMA1

IPD80R3K3P7ATMA1 Infineon Technologies

INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.52 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPD80R3K3P7ATMA1 Infineon Technologies

Description: MOSFET N-CH 800V 1.9A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V, Power Dissipation (Max): 18W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 30µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V.

Weitere Produktangebote IPD80R3K3P7ATMA1 nach Preis ab 0.47 EUR bis 2.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPD80R3K3P7ATMA1 IPD80R3K3P7ATMA1 Infineon Technologies Infineon_IPD80R3K3P7_DataSheet_v02_03_EN-3362450.pdf MOSFETs 800V CoolMOS P7PowerDevice
auf Bestellung 6408 Stücke:
Lieferzeit 10-14 Tag (e)
3+0.99 EUR
10+0.97 EUR
100+0.73 EUR
500+0.61 EUR
1000+0.56 EUR
2500+0.51 EUR
5000+0.47 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R3K3P7ATMA1 IPD80R3K3P7ATMA1 Infineon Technologies INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
auf Bestellung 4993 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
14+1.3 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.6 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R3K3P7ATMA1 Infineon_IPD80R3K3P7_DataSheet_v02_03_EN-3362450.pdf
IPD80R3K3P7ATMA1
Hersteller: Infineon Technologies
MOSFETs 800V CoolMOS P7PowerDevice
auf Bestellung 6408 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+0.99 EUR
10+0.97 EUR
100+0.73 EUR
500+0.61 EUR
1000+0.56 EUR
2500+0.51 EUR
5000+0.47 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R3K3P7ATMA1 INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw
IPD80R3K3P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
auf Bestellung 4993 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.06 EUR
14+1.3 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.6 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH