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IPD90N03S4L03ATMA1

IPD90N03S4L03ATMA1 Infineon Technologies

Infineon_IPD90N03S4L_03_DS_v02_01_en-1731862.pdf Hersteller: Infineon Technologies
MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2
auf Bestellung 7520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.46 EUR
10+ 2.04 EUR
100+ 1.62 EUR
500+ 1.37 EUR
1000+ 1.26 EUR
Mindestbestellmenge: 2
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Technische Details IPD90N03S4L03ATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 90A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 45µA, Supplier Device Package: PG-TO252-3-11, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V.

Weitere Produktangebote IPD90N03S4L03ATMA1 nach Preis ab 1.6 EUR bis 2.87 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPD90N03S4L03ATMA1 IPD90N03S4L03ATMA1 Hersteller : Infineon Technologies Infineon-IPD90N03S4L_03-DS-v02_01-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b426fe803b44&ack=t Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
auf Bestellung 808 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.87 EUR
10+ 2.38 EUR
100+ 1.89 EUR
500+ 1.6 EUR
Mindestbestellmenge: 7
IPD90N03S4L03ATMA1
Produktcode: 135663 		Infineon-IPD90N03S4L_03-DS-v02_01-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b426fe803b44&ack=t Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IPD90N03S4L03ATMA1 IPD90N03S4L03ATMA1 Hersteller : Infineon Technologies ipd90n03s4l-03_ds_2_0.pdf Trans MOSFET N-CH 30V 90A Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IPD90N03S4L03ATMA1 IPD90N03S4L03ATMA1 Hersteller : Infineon Technologies Infineon-IPD90N03S4L_03-DS-v02_01-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b426fe803b44&ack=t Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar