Weitere Produktangebote IPD90N03S4L03ATMA1 nach Preis ab 0.83 EUR bis 3.43 EUR
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IPD90N03S4L03ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD90N03S4L03ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD90N03S4L03ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD90N03S4L03ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 14598 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD90N03S4L03ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 869 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD90N03S4L03ATMA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 30V 90A DPAK-2 OptiMOS-T2 |
auf Bestellung 165 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD90N03S4L03ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 90A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 45µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1112 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD90N03S4L03ATMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPD90N03S4L03ATMA1 - IPD90N03 20V-40V N-CHANNEL AUTOMOTIVE M tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 3094 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD90N03S4L03ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| IPD90N03S4L03ATMA1 | Hersteller : Infineon |
MOSFET N-CH 30V 90A TO252-3 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IPD90N03S4L03ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 45µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |