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IPD90N06S407ATMA2

IPD90N06S407ATMA2 Infineon Technologies

Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87 Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.7 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPD90N06S407ATMA2 Infineon Technologies

Description: MOSFET N-CH 60V 90A TO252-31, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 4V @ 40µA, Supplier Device Package: PG-TO252-3-11, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

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IPD90N06S407ATMA2 IPD90N06S407ATMA2 Hersteller : Infineon Technologies infineonipd90n06s407dsv0100en.pdf Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 11169 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
177+0.82 EUR
179+0.78 EUR
182+0.74 EUR
185+0.7 EUR
250+0.66 EUR
500+0.62 EUR
1000+0.59 EUR
3000+0.58 EUR
6000+0.57 EUR
Mindestbestellmenge: 177
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IPD90N06S407ATMA2 IPD90N06S407ATMA2 Hersteller : Infineon Technologies infineonipd90n06s407dsv0100en.pdf Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 11169 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
174+0.83 EUR
177+0.79 EUR
179+0.75 EUR
182+0.71 EUR
185+0.67 EUR
250+0.63 EUR
500+0.6 EUR
1000+0.59 EUR
3000+0.58 EUR
Mindestbestellmenge: 174
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IPD90N06S407ATMA2 IPD90N06S407ATMA2 Hersteller : Infineon Technologies Infineon-IPD90N06S4_07-DS-v01_00-en.pdf MOSFETs MOSFET
auf Bestellung 2759 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.94 EUR
10+0.88 EUR
100+0.86 EUR
500+0.83 EUR
2500+0.73 EUR
Mindestbestellmenge: 4
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IPD90N06S407ATMA2 IPD90N06S407ATMA2 Hersteller : Infineon Technologies Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87 Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 39270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
20+0.9 EUR
100+0.86 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IPD90N06S407ATMA2 IPD90N06S407ATMA2 Hersteller : Infineon Technologies infineonipd90n06s407dsv0100en.pdf Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 1156 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
475+1.14 EUR
528+0.99 EUR
1000+0.88 EUR
Mindestbestellmenge: 475
Im Einkaufswagen  Stück im Wert von  UAH
IPD90N06S407ATMA2 IPD90N06S407ATMA2 Hersteller : Infineon Technologies ipd90n06s4-07_ds_10.pdf Trans MOSFET N-CH 60V 90A Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
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IPD90N06S4-07ATMA2 Hersteller : Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Produkt ist nicht verfügbar
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IPD90N06S407ATMA2 Hersteller : INFINEON TECHNOLOGIES Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Pulsed drain current: 360A
Power dissipation: 79W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH