IPD90N06S4L05ATMA2 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 2158 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 373+ | 1.46 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD90N06S4L05ATMA2 Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 60µA, Supplier Device Package: PG-TO252-3-11, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPD90N06S4L05ATMA2 nach Preis ab 0.93 EUR bis 2.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IPD90N06S4L05ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 1894 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
IPD90N06S4L05ATMA2 | Hersteller : Infineon Technologies |
MOSFETs MOSFET |
auf Bestellung 1822 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
IPD90N06S4L05ATMA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO252-31 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 60µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2241 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
IPD90N06S4L05ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 90A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
IPD90N06S4L05ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
IPD90N06S4L05ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
IPD90N06S4L05ATMA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO252-31 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 60µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |