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IPD90N06S4L05ATMA2

IPD90N06S4L05ATMA2 Infineon Technologies

Infineon-IPD90N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038729a180c91 Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
10+1.85 EUR
100+1.30 EUR
500+1.12 EUR
Mindestbestellmenge: 8
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Technische Details IPD90N06S4L05ATMA2 Infineon Technologies

Description: MOSFET N-CH 60V 90A TO252-31, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 60µA, Supplier Device Package: PG-TO252-3-11, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V, Qualification: AEC-Q101.

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IPD90N06S4L05ATMA2 IPD90N06S4L05ATMA2 Hersteller : Infineon Technologies Infineon_IPD90N06S4L_05_DS_v01_00_en-1731864.pdf MOSFETs MOSFET
auf Bestellung 1957 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.62 EUR
10+1.95 EUR
100+1.37 EUR
500+1.12 EUR
1000+1.04 EUR
2500+1.03 EUR
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IPD90N06S4L05ATMA2 IPD90N06S4L05ATMA2 Hersteller : Infineon Technologies ipd90n06s4l-05_ds_10.pdf Trans MOSFET N-CH 60V 90A Automotive 3-Pin(2+Tab) DPAK T/R
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IPD90N06S4L05ATMA2 IPD90N06S4L05ATMA2 Hersteller : Infineon Technologies Infineon-IPD90N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038729a180c91 Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH