| Anzahl | Preis |
|---|---|
| 1+ | 3.22 EUR |
| 10+ | 2.08 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.04 EUR |
| 2500+ | 0.91 EUR |
| 5000+ | 0.9 EUR |
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Technische Details IPD90R1K2C3ATMA2 Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO252-3, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 3.5V @ 310µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V.
Weitere Produktangebote IPD90R1K2C3ATMA2 nach Preis ab 1.17 EUR bis 3.66 EUR
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IPD90R1K2C3ATMA2 | Infineon Technologies |
 Description: MOSFET N-CH 900V 5.1A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 310µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V |
auf Bestellung 1989 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD90R1K2C3ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Description: MOSFET N-CH 900V 5.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.66 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.17 EUR |