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IPD95R2K0P7ATMA1

IPD95R2K0P7ATMA1 Infineon Technologies

Infineon-IPD95R2K0P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb016436fe9ce05009 Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.69 EUR
7500+0.63 EUR
Mindestbestellmenge: 2500
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Technische Details IPD95R2K0P7ATMA1 Infineon Technologies

Description: MOSFET N-CH 950V 4A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 80µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V.

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IPD95R2K0P7ATMA1 IPD95R2K0P7ATMA1 Hersteller : Infineon Technologies Infineon_IPD95R2K0P7_DataSheet_v02_03_EN-3362790.pdf MOSFETs N
auf Bestellung 42067 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.90 EUR
10+1.55 EUR
100+1.21 EUR
500+1.03 EUR
1000+0.84 EUR
2500+0.79 EUR
5000+0.75 EUR
Mindestbestellmenge: 2
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IPD95R2K0P7ATMA1 IPD95R2K0P7ATMA1 Hersteller : Infineon Technologies Infineon-IPD95R2K0P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb016436fe9ce05009 Description: MOSFET N-CH 950V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
auf Bestellung 12498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
12+1.60 EUR
100+1.10 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R2K0P7ATMA1 IPD95R2K0P7ATMA1 Hersteller : Infineon Technologies infineon-ipd95r2k0p7-datasheet-v02_03-en.pdf Trans MOSFET N-CH 950V 4A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
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IPD95R2K0P7ATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IPD95R2K0P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb016436fe9ce05009 IPD95R2K0P7 SMD N channel transistors
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