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IPD95R450P7ATMA1

IPD95R450P7ATMA1 Infineon Technologies

Infineon-IPD95R450P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b1b778a55d4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 14A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.27 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPD95R450P7ATMA1 Infineon Technologies

Description: MOSFET N-CH 950V 14A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 360µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V.

Weitere Produktangebote IPD95R450P7ATMA1 nach Preis ab 1.48 EUR bis 4.31 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPD95R450P7ATMA1 IPD95R450P7ATMA1 INFINEON TECHNOLOGIES IPD95R450P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 8.6A
Power dissipation: 104W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Version: ESD
Gate charge: 35nC
auf Bestellung 1303 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.89 EUR
31+2.32 EUR
35+2.04 EUR
36+1.99 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R450P7ATMA1 IPD95R450P7ATMA1 Infineon Technologies Infineon-IPD95R450P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b1b778a55d4 Description: MOSFET N-CH 950V 14A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
auf Bestellung 5483 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.24 EUR
10+2.74 EUR
100+1.89 EUR
500+1.55 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R450P7ATMA1 IPD95R450P7ATMA1 Infineon Technologies Infineon_IPD95R450P7_DataSheet_v02_02_EN.pdf MOSFETs LOW POWER_NEW
auf Bestellung 3323 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.31 EUR
10+2.8 EUR
100+1.94 EUR
500+1.59 EUR
1000+1.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R450P7ATMA1 IPD95R450P7.pdf
IPD95R450P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 8.6A
Power dissipation: 104W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Version: ESD
Gate charge: 35nC
auf Bestellung 1303 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
25+2.89 EUR
31+2.32 EUR
35+2.04 EUR
36+1.99 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R450P7ATMA1 Infineon-IPD95R450P7-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01643b1b778a55d4
IPD95R450P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 14A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
auf Bestellung 5483 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.24 EUR
10+2.74 EUR
100+1.89 EUR
500+1.55 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R450P7ATMA1 Infineon_IPD95R450P7_DataSheet_v02_02_EN.pdf
IPD95R450P7ATMA1
Hersteller: Infineon Technologies
MOSFETs LOW POWER_NEW
auf Bestellung 3323 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+4.31 EUR
10+2.8 EUR
100+1.94 EUR
500+1.59 EUR
1000+1.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH