auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.7 EUR |
| 10+ | 3.04 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.71 EUR |
| 2500+ | 1.5 EUR |
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Technische Details IPD95R450PFD7ATMA1 Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 360µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V.
Weitere Produktangebote IPD95R450PFD7ATMA1 nach Preis ab 1.8 EUR bis 5.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPD95R450PFD7ATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 950V 13.3A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 360µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V |
auf Bestellung 2456 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD95R450PFD7ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPD95R450PFD7ATMA1 - Leistungs-MOSFET, n-Kanal, 950 V, 13.3 A, 0.35 ohm, TO-252 (DPAK), Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 950V Dauer-Drainstrom Id: 13.3A hazardous: false Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 104W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS PFD7 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.35ohm SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 1607 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD95R450PFD7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 950V 13.3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD95R450PFD7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 950V 13.3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD95R450PFD7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 950V 13.3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD95R450PFD7ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 950V 13.3A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 360µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V |
Produkt ist nicht verfügbar |