| Anzahl | Preis |
|---|---|
| 1+ | 9.66 EUR |
| 10+ | 8.52 EUR |
| 100+ | 7.57 EUR |
| 1000+ | 6.92 EUR |
| 1700+ | 6.42 EUR |
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Technische Details IPDD60R050G7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 47A HDSOP-10, Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-HDSOP-10-1, Vgs(th) (Max) @ Id: 4V @ 800µA, Power Dissipation (Max): 278W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 10-PowerSOP Module, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPDD60R050G7XTMA1 nach Preis ab 7.35 EUR bis 13.68 EUR
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IPDD60R050G7XTMA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 47A HDSOP-10Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-HDSOP-10-1 Vgs(th) (Max) @ Id: 4V @ 800µA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Cut Tape (CT) |
auf Bestellung 3215 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDD60R050G7XTMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 47A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 47A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
auf Bestellung 3215 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.68 EUR |
| 10+ | 10.47 EUR |
| 100+ | 8 EUR |
| 500+ | 7.35 EUR |