| Anzahl | Preis |
|---|---|
| 1+ | 9.94 EUR |
| 10+ | 6.95 EUR |
| 100+ | 5.16 EUR |
| 1000+ | 4.4 EUR |
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Technische Details IPDD60R055CFD7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 52A HDSOP-10, Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: PG-HDSOP-10-1, Vgs(th) (Max) @ Id: 4.5V @ 760µA, Power Dissipation (Max): 329W (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 10-PowerSOP Module, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPDD60R055CFD7XTMA1 nach Preis ab 5.06 EUR bis 11.3 EUR
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IPDD60R055CFD7XTMA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 52A HDSOP-10Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V Power Dissipation (Max): 329W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 760µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V |
auf Bestellung 1335 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDD60R055CFD7XTMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 52A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V
Description: MOSFET N-CH 600V 52A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V
auf Bestellung 1335 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.3 EUR |
| 10+ | 8.01 EUR |
| 100+ | 5.92 EUR |
| 500+ | 5.06 EUR |