IPDD60R102G7XTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 600V 23A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
auf Bestellung 1615 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.29 EUR |
| 10+ | 6.22 EUR |
| 100+ | 4.47 EUR |
| 500+ | 3.72 EUR |
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Technische Details IPDD60R102G7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 23A HDSOP-10, Packaging: Tape & Reel (TR), Package / Case: 10-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 4V @ 390µA, Supplier Device Package: PG-HDSOP-10-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V.
Weitere Produktangebote IPDD60R102G7XTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| IPDD60R102G7XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm: 66A Type of transistor: N-MOSFET Technology: CoolMOS™ G7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 66A Power dissipation: 139W Case: PG-HDSOP-10-1 Gate-source voltage: ±20V On-state resistance: 0.102Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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IPDD60R102G7XTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 23A HDSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 390µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPDD60R102G7XTMA1 | Hersteller : Infineon Technologies |
MOSFETs HIGH POWER_NEW |
Produkt ist nicht verfügbar |
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| IPDD60R102G7XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm: 66A Type of transistor: N-MOSFET Technology: CoolMOS™ G7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 66A Power dissipation: 139W Case: PG-HDSOP-10-1 Gate-source voltage: ±20V On-state resistance: 0.102Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |