| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.58 EUR |
| 10+ | 5.99 EUR |
| 100+ | 5.18 EUR |
| 500+ | 4.02 EUR |
| 1000+ | 3.8 EUR |
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Technische Details IPDD60R125G7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 20A HDSOP-10, Packaging: Tape & Reel (TR), Package / Case: 10-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 4V @ 320µA, Supplier Device Package: PG-HDSOP-10-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V.
Weitere Produktangebote IPDD60R125G7XTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPDD60R125G7XTMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A Mounting: SMD Pulsed drain current: 54A Power dissipation: 120W Gate charge: 27nC Polarisation: unipolar Technology: CoolMOS™ G7 Drain current: 20A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-HDSOP-10-1 On-state resistance: 0.125Ω |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPDD60R125G7XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Mounting: SMD
Pulsed drain current: 54A
Power dissipation: 120W
Gate charge: 27nC
Polarisation: unipolar
Technology: CoolMOS™ G7
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HDSOP-10-1
On-state resistance: 0.125Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Mounting: SMD
Pulsed drain current: 54A
Power dissipation: 120W
Gate charge: 27nC
Polarisation: unipolar
Technology: CoolMOS™ G7
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HDSOP-10-1
On-state resistance: 0.125Ω
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)