auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.33 EUR |
| 10+ | 3.1 EUR |
| 100+ | 2.97 EUR |
| 500+ | 2.96 EUR |
| 1700+ | 2.76 EUR |
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Technische Details IPDD60R125G7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 20A HDSOP-10, Packaging: Tape & Reel (TR), Package / Case: 10-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 4V @ 320µA, Supplier Device Package: PG-HDSOP-10-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V.
Weitere Produktangebote IPDD60R125G7XTMA1 nach Preis ab 3.01 EUR bis 5.85 EUR
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IPDD60R125G7XTMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 600V 20A HDSOP-10Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V |
auf Bestellung 1085 Stücke: Lieferzeit 10-14 Tag (e) |
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IPDD60R125G7XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A Type of transistor: N-MOSFET Technology: CoolMOS™ G7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 54A Power dissipation: 120W Case: PG-HDSOP-10-1 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 47 Stücke: Lieferzeit 7-14 Tag (e) |
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IPDD60R125G7XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A Type of transistor: N-MOSFET Technology: CoolMOS™ G7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 54A Power dissipation: 120W Case: PG-HDSOP-10-1 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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IPDD60R125G7XTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20A 10-Pin HDSOP EP T/R |
Produkt ist nicht verfügbar |
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IPDD60R125G7XTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 20A HDSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V |
Produkt ist nicht verfügbar |