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IPDD60R125G7XTMA1

IPDD60R125G7XTMA1 Infineon Technologies


Infineon_IPDD60R125G7_DataSheet_v02_01_EN-3362664.pdf Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
auf Bestellung 1700 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.43 EUR
10+3.13 EUR
100+2.97 EUR
500+2.96 EUR
1000+2.94 EUR
1700+2.76 EUR
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Technische Details IPDD60R125G7XTMA1 Infineon Technologies

Description: MOSFET N-CH 600V 20A HDSOP-10, Packaging: Tape & Reel (TR), Package / Case: 10-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 4V @ 320µA, Supplier Device Package: PG-HDSOP-10-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V.

Weitere Produktangebote IPDD60R125G7XTMA1 nach Preis ab 3.01 EUR bis 5.85 EUR

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Preis
IPDD60R125G7XTMA1 IPDD60R125G7XTMA1 Hersteller : Infineon Technologies Infineon-IPDD60R125G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161706cba27778f Description: MOSFET N-CH 600V 20A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
auf Bestellung 1085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.92 EUR
10+3.33 EUR
100+3.01 EUR
Mindestbestellmenge: 5
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IPDD60R125G7XTMA1 IPDD60R125G7XTMA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBD1B7D4D39B8BF&compId=IPDD60R125G7.pdf?ci_sign=7ebc21da93799da986dcb0eebb06c33188e05b45 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: CoolMOS™ G7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 54A
Mounting: SMD
Case: PG-HDSOP-10-1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 47 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.85 EUR
18+4.19 EUR
19+3.96 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R125G7XTMA1 IPDD60R125G7XTMA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBD1B7D4D39B8BF&compId=IPDD60R125G7.pdf?ci_sign=7ebc21da93799da986dcb0eebb06c33188e05b45 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: CoolMOS™ G7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 54A
Mounting: SMD
Case: PG-HDSOP-10-1
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.85 EUR
18+4.19 EUR
19+3.96 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R125G7XTMA1 IPDD60R125G7XTMA1 Hersteller : Infineon Technologies infineon-ipdd60r125g7-datasheet-v02_01-en.pdf Trans MOSFET N-CH 600V 20A 10-Pin HDSOP EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R125G7XTMA1 IPDD60R125G7XTMA1 Hersteller : Infineon Technologies Infineon-IPDD60R125G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161706cba27778f Description: MOSFET N-CH 600V 20A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH