IPDD60R150G7XTMA1 Infineon Technologies

Description: MOSFET N-CH 600V 16A HDSOP-10, Packaging: Tape & Reel (TR), Package / Case: 10-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V, Power Dissipation (Max): 95W (Tc), Vgs(th) (Max) @ Id: 4V @ 260µA, Supplier Device Package: PG-HDSOP-10-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V.