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IPDD60R150G7XTMA1

IPDD60R150G7XTMA1 Infineon Technologies

Infineon_IPDD60R150G7_DataSheet_v02_01_EN-3362409.pdf Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
auf Bestellung 1971 Stücke:
Lieferzeit 10-14 Tag (e)
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1+4.93 EUR
10+3.98 EUR
25+3.94 EUR
100+3.19 EUR
250+3.15 EUR
500+2.66 EUR
1700+2.57 EUR
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Technische Details IPDD60R150G7XTMA1 Infineon Technologies

Description: MOSFET N-CH 600V 16A HDSOP-10, Packaging: Tape & Reel (TR), Package / Case: 10-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V, Power Dissipation (Max): 95W (Tc), Vgs(th) (Max) @ Id: 4V @ 260µA, Supplier Device Package: PG-HDSOP-10-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V.

Weitere Produktangebote IPDD60R150G7XTMA1 nach Preis ab 2.54 EUR bis 6.69 EUR

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IPDD60R150G7XTMA1 IPDD60R150G7XTMA1 Hersteller : Infineon Technologies Infineon-IPDD60R150G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170806aa57863 Description: MOSFET N-CH 600V 16A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.69 EUR
10+4.4 EUR
100+3.1 EUR
500+2.54 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R150G7XTMA1 IPDD60R150G7XTMA1 Hersteller : Infineon Technologies Infineon-IPDD60R150G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170806aa57863 Description: MOSFET N-CH 600V 16A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R150G7XTMA1 IPDD60R150G7XTMA1 Hersteller : Infineon Technologies infineon-ipdd60r150g7-datasheet-v02_01-en.pdf Trans MOSFET N-CH 600V 16A 10-Pin HDSOP EP T/R
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Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R150G7XTMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IPDD60R150G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170806aa57863 IPDD60R150G7XTMA1 SMD N channel transistors
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