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IPDQ60R010S7XTMA1

IPDQ60R010S7XTMA1 Infineon Technologies

Infineon-IPDQ60R010S7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751cdc7c864327 Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
auf Bestellung 107 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+56.06 EUR
10+ 51.7 EUR
25+ 49.38 EUR
100+ 44.15 EUR
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Technische Details IPDQ60R010S7XTMA1 Infineon Technologies

Description: HIGH POWER_NEW PG-HDSOP-22, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3.08mA, Supplier Device Package: PG-HDSOP-22-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V.

Weitere Produktangebote IPDQ60R010S7XTMA1 nach Preis ab 39.73 EUR bis 56.47 EUR

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IPDQ60R010S7XTMA1 IPDQ60R010S7XTMA1 Hersteller : Infineon Technologies Infineon-IPDQ60R010S7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751cdc7c864327 MOSFET HIGH POWER_NEW
auf Bestellung 600 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
1+56.47 EUR
10+ 51.01 EUR
25+ 48.13 EUR
50+ 47.32 EUR
100+ 45.37 EUR
250+ 43.29 EUR
500+ 39.73 EUR
IPDQ60R010S7XTMA1 IPDQ60R010S7XTMA1 Hersteller : Infineon Technologies infineon-ipdq60r010s7-datasheet-v02_03-en.pdf N Channel Power Mosfet
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
IPDQ60R010S7XTMA1 IPDQ60R010S7XTMA1 Hersteller : Infineon Technologies Infineon-IPDQ60R010S7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751cdc7c864327 Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
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