IPDQ60R022S7AXTMA1 Infineon Technologies
auf Bestellung 732 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 21.03 EUR |
| 10+ | 18.53 EUR |
| 25+ | 18.04 EUR |
| 50+ | 17.04 EUR |
| 100+ | 16.02 EUR |
| 250+ | 15.54 EUR |
| 500+ | 15.44 EUR |
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Technische Details IPDQ60R022S7AXTMA1 Infineon Technologies
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V, Power Dissipation (Max): 416W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.44mA, Supplier Device Package: PG-HDSOP-22-1, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V, Qualification: AEC-Q101.
Weitere Produktangebote IPDQ60R022S7AXTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPDQ60R022S7AXTMA1 | Hersteller : Infineon Technologies |
 Description: MOSFETPackaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.44mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V Qualification: AEC-Q101 |
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IPDQ60R022S7AXTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.44mA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |