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IPDQ60R022S7XTMA1

IPDQ60R022S7XTMA1 Infineon Technologies

Infineon-IPDQ60R022S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06a8ffdb1518 Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
auf Bestellung 733 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.61 EUR
10+12.97 EUR
25+12.06 EUR
100+11.06 EUR
250+10.58 EUR
Mindestbestellmenge: 2
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Technische Details IPDQ60R022S7XTMA1 Infineon Technologies

Description: HIGH POWER_NEW PG-HDSOP-22, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V, Power Dissipation (Max): 416W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.44mA, Supplier Device Package: PG-HDSOP-22-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V.

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IPDQ60R022S7XTMA1 IPDQ60R022S7XTMA1 Hersteller : Infineon Technologies Infineon_IPDQ60R022S7_DataSheet_v02_00_EN-3084787.pdf MOSFETs HIGH POWER_NEW
auf Bestellung 229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.72 EUR
10+15.61 EUR
25+15.19 EUR
50+14.34 EUR
100+13.5 EUR
250+13.08 EUR
500+12.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPDQ60R022S7XTMA1 IPDQ60R022S7XTMA1 Hersteller : Infineon Technologies infineon-ipdq60r022s7-datasheet-v02_00-en.pdf Trans MOSFET N-CH 600V 24A T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPDQ60R022S7XTMA1 IPDQ60R022S7XTMA1 Hersteller : Infineon Technologies Infineon-IPDQ60R022S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06a8ffdb1518 Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH