IPDQ60R065S7XTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
auf Bestellung 285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.25 EUR |
| 10+ | 5.51 EUR |
| 25+ | 5.08 EUR |
| 100+ | 4.6 EUR |
| 250+ | 4.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPDQ60R065S7XTMA1 Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 490µA, Supplier Device Package: PG-HDSOP-22-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V.
Weitere Produktangebote IPDQ60R065S7XTMA1 nach Preis ab 3.87 EUR bis 7.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPDQ60R065S7XTMA1 | Hersteller : Infineon Technologies |
MOSFETs HIGH POWER_NEW |
auf Bestellung 733 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IPDQ60R065S7XTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
IPDQ60R065S7XTMA1 | Hersteller : Infineon Technologies |
Description: HIGH POWER_NEW PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 490µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V |
Produkt ist nicht verfügbar |