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IPDQ65R018CM8XTMA1

IPDQ65R018CM8XTMA1 Infineon Technologies


Infineon_03-25-2025_DS_IPDQ65R018CM8_2_0.pdf Hersteller: Infineon Technologies
MOSFETs 650V CoolMOS CM8 Power Transistor
auf Bestellung 621 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.32 EUR
10+14.92 EUR
100+12.43 EUR
500+11.09 EUR
750+9.4 EUR
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Technische Details IPDQ65R018CM8XTMA1 Infineon Technologies

Description: IPDQ65R018CM8XTMA1, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 127A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 1.48mA, Supplier Device Package: PG-HDSOP-22, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V.

Weitere Produktangebote IPDQ65R018CM8XTMA1 nach Preis ab 11.12 EUR bis 18.57 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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IPDQ65R018CM8XTMA1 IPDQ65R018CM8XTMA1 Hersteller : Infineon Technologies Infineon-IPDQ65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e767040a98 Description: IPDQ65R018CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.57 EUR
10+12.92 EUR
100+11.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPDQ65R018CM8XTMA1 IPDQ65R018CM8XTMA1 Hersteller : Infineon Technologies Infineon-IPDQ65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e767040a98 Description: IPDQ65R018CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
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Im Einkaufswagen  Stück im Wert von  UAH