Produkte > INFINEON TECHNOLOGIES > IPDQ65R018CM8XTMA1

IPDQ65R018CM8XTMA1 INFINEON TECHNOLOGIES

Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 127A; 625W
Mounting: SMD
Power dissipation: 625W
Gate charge: 173nC
Technology: CoolMOS™
Drain current: 127A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
On-state resistance: 18mΩ

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Technische Details IPDQ65R018CM8XTMA1 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; 650V; 127A; 625W, Mounting: SMD, Power dissipation: 625W, Gate charge: 173nC, Technology: CoolMOS™, Drain current: 127A, Kind of channel: enhancement, Drain-source voltage: 650V, Type of transistor: N-MOSFET, Gate-source voltage: 20V, On-state resistance: 18mΩ.