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IPDQ65R029CFD7AXTMA1

IPDQ65R029CFD7AXTMA1 Infineon Technologies


Infineon-IPDQ65R029CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76e6ef33ab Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 750 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+11.79 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPDQ65R029CFD7AXTMA1 Infineon Technologies

Description: AUTOMOTIVE_COOLMOS, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V, Power Dissipation (Max): 463W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.79mA, Supplier Device Package: PG-HDSOP-22-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V, Qualification: AEC-Q101.

Weitere Produktangebote IPDQ65R029CFD7AXTMA1 nach Preis ab 11.63 EUR bis 19.13 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPDQ65R029CFD7AXTMA1 IPDQ65R029CFD7AXTMA1 Hersteller : Infineon Technologies Infineon-IPDQ65R029CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76e6ef33ab Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.13 EUR
10+15.00 EUR
25+13.96 EUR
100+12.82 EUR
250+12.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPDQ65R029CFD7AXTMA1 Hersteller : Infineon Technologies Infineon_IPDQ65R029CFD7A_DataSheet_v02_01_EN-3324400.pdf MOSFETs Y
auf Bestellung 750 Stücke:
Lieferzeit 150-154 Tag (e)
Anzahl Preis
1+17.69 EUR
10+15.91 EUR
25+15.36 EUR
50+14.78 EUR
100+13.60 EUR
250+13.06 EUR
500+11.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPDQ65R029CFD7AXTMA1 Hersteller : Infineon Technologies Infineon-IPDQ65R029CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76e6ef33ab IPDQ65R029CFD7A
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