IPDQ65R029CFD7AXTMA1 Infineon Technologies

Description: AUTOMOTIVE_COOLMOS, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PG-HDSOP-22-1, Vgs(th) (Max) @ Id: 4.5V @ 1.79mA, Power Dissipation (Max): 463W (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 22-PowerBSOP Module.