IPF016N10NF2SATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 274A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 267µA, Supplier Device Package: PG-TO263-7-14, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V.