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IPF016N10NF2SATMA1

IPF016N10NF2SATMA1 Infineon Technologies


Infineon_IPF016N10NF2S_DataSheet_v02_00_EN-3106643.pdf Hersteller: Infineon Technologies
MOSFET TRENCH >=100V
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Technische Details IPF016N10NF2SATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 274A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 267µA, Supplier Device Package: PG-TO263-7-14, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V.

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IPF016N10NF2SATMA1 Hersteller : Infineon Technologies infineon-ipf016n10nf2s-datasheet-v02_00-en.pdf SP005578929
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Lieferzeit 14-21 Tag (e)
IPF016N10NF2SATMA1 IPF016N10NF2SATMA1 Hersteller : Infineon Technologies Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Produkt ist nicht verfügbar
IPF016N10NF2SATMA1 IPF016N10NF2SATMA1 Hersteller : Infineon Technologies Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Produkt ist nicht verfügbar