IPF018N10NM5LF2ATMA1 Infineon Technologies

Description: IPF018N10NM5LF2ATMA1, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Supplier Device Package: PG-TO263-7-3, Vgs(th) (Max) @ Id: 3.9V @ 280µA, Power Dissipation (Max): 3.8W (Ta), 375W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V.