auf Bestellung 61000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 6.85 EUR |
| 30000+ | 6.06 EUR |
| 45000+ | 5.46 EUR |
| 60000+ | 4.98 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPF026N15NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 239A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 15V, Power Dissipation (Max): 3.8W (Ta), 395W (Tc), Vgs(th) (Max) @ Id: 4V @ 276µA, Supplier Device Package: PG-TO263-7-3, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V.
Weitere Produktangebote IPF026N15NM6ATMA1 nach Preis ab 3.96 EUR bis 14.96 EUR
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IPF026N15NM6ATMA1 | Hersteller : Infineon Technologies |
 Power MOSFET |
auf Bestellung 513 Stücke: Lieferzeit 14-21 Tag (e) |
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IPF026N15NM6ATMA1 | Hersteller : Infineon Technologies |
Power MOSFET |
auf Bestellung 513 Stücke: Lieferzeit 14-21 Tag (e) |
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IPF026N15NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 239A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 4V @ 276µA Supplier Device Package: PG-TO263-7-3 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPF026N15NM6ATMA1 | Hersteller : Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 1277 Stücke: Lieferzeit 10-14 Tag (e) |
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IPF026N15NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 239A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 4V @ 276µA Supplier Device Package: PG-TO263-7-3 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V |
auf Bestellung 1589 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPF026N15NM6ATMA1 | Hersteller : Infineon Technologies |
IPF026N15NM6ATMA1 |
Produkt ist nicht verfügbar |
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IPF026N15NM6ATMA1 | Hersteller : Infineon Technologies |
Power MOSFET |
Produkt ist nicht verfügbar |