IPF05N03LAG Infineon Technologies
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-23
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Technische Details IPF05N03LAG Infineon Technologies
Description: MOSFET N-CH 25V 50A TO252-3, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO252-3-23, Vgs(th) (Max) @ Id: 2V @ 50µA, Power Dissipation (Max): 94W (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote IPF05N03LAG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IPF05N03LA G | Infineon Technologies |
Description: MOSFET N-CH 25V 50A TO252-3Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO252-3-23 Vgs(th) (Max) @ Id: 2V @ 50µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPF05N03LA G |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO252-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3-23
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 25V 50A TO252-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3-23
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH


