| Anzahl | Preis |
|---|---|
| 1+ | 7.92 EUR |
| 10+ | 5.74 EUR |
| 100+ | 4.8 EUR |
| 500+ | 4.51 EUR |
| 1000+ | 3.82 EUR |
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Technische Details IPF129N20NM6ATMA1 Infineon Technologies
Description: IPF129N20NM6ATMA1, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Supplier Device Package: PG-TO263-7-3, Vgs(th) (Max) @ Id: 4.5V @ 129µA, Power Dissipation (Max): 3.8W (Ta), 234W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V.
Weitere Produktangebote IPF129N20NM6ATMA1 nach Preis ab 3.84 EUR bis 9.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPF129N20NM6ATMA1 | Infineon Technologies |
 Description: IPF129N20NM6ATMA1Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Supplier Device Package: PG-TO263-7-3 Vgs(th) (Max) @ Id: 4.5V @ 129µA Power Dissipation (Max): 3.8W (Ta), 234W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
auf Bestellung 797 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPF129N20NM6ATMA1 |
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Hersteller: Infineon Technologies
Description: IPF129N20NM6ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Description: IPF129N20NM6ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
auf Bestellung 797 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.56 EUR |
| 10+ | 6.4 EUR |
| 100+ | 4.6 EUR |
| 500+ | 3.84 EUR |