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IPG16N10S4L61AATMA1

IPG16N10S4L61AATMA1 Infineon Technologies

IPG16N10S4L-61A_Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c1313ea0aaa Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 16A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V
Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 90µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 7511 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+1.81 EUR
100+1.19 EUR
500+0.91 EUR
1000+0.89 EUR
Mindestbestellmenge: 7
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Technische Details IPG16N10S4L61AATMA1 Infineon Technologies

Description: MOSFET 2N-CH 100V 16A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 29W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 16A, Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V, Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 90µA, Supplier Device Package: PG-TDSON-8-10, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

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IPG16N10S4L61AATMA1 IPG16N10S4L61AATMA1 Hersteller : Infineon Technologies IPG16N10S4L_61A_Data_Sheet_10_Infineon-1507397.pdf MOSFETs MOSFET_(75V 120V(
auf Bestellung 6132 Stücke:
Lieferzeit 10-14 Tag (e)
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1+2.94 EUR
10+1.87 EUR
100+1.22 EUR
500+0.94 EUR
1000+0.91 EUR
2500+0.86 EUR
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IPG16N10S4L61AATMA1 IPG16N10S4L61AATMA1 Hersteller : Infineon Technologies 395ipg16n10s4l-61a_data-sheet-10-infineon.pdffolderiddb3a30431f84840.pdf Trans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON T/R
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IPG16N10S4L61AATMA1 IPG16N10S4L61AATMA1 Hersteller : Infineon Technologies IPG16N10S4L-61A_Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c1313ea0aaa Description: MOSFET 2N-CH 100V 16A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V
Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 90µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH