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IPG20N04S409AATMA1 Infineon Technologies

Infineon-IPG20N04S4-09A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017e87fd4adf699b Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.97 EUR
Mindestbestellmenge: 5000
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Technische Details IPG20N04S409AATMA1 Infineon Technologies

Description: MOSFET 2N-CH 40V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 54W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V, Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 22µA, Supplier Device Package: PG-TDSON-8-4, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote IPG20N04S409AATMA1 nach Preis ab 1.02 EUR bis 2.46 EUR

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Preis ohne MwSt
IPG20N04S409AATMA1 Hersteller : Infineon Technologies Infineon-IPG20N04S4-09A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017e87fd4adf699b Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.46 EUR
10+ 2.02 EUR
100+ 1.57 EUR
500+ 1.33 EUR
1000+ 1.09 EUR
2000+ 1.02 EUR
Mindestbestellmenge: 8
IPG20N04S409AATMA1 Hersteller : Infineon Technologies infineon-ipg20n04s4-09a-datasheet-v01_00-en.pdf SP001200172
Produkt ist nicht verfügbar
IPG20N04S409AATMA1 Hersteller : Infineon Technologies Infineon-IPG20N04S4-09A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017e87fd4adf699b MOSFET MOSFET_(20V 40V)
Produkt ist nicht verfügbar