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IPG20N04S4L08ATMA1

IPG20N04S4L08ATMA1 Infineon Technologies

Infineon-IPG20N04S4L_08-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf634e6f6c0f Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.99 EUR
10000+ 0.94 EUR
Mindestbestellmenge: 5000
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Technische Details IPG20N04S4L08ATMA1 Infineon Technologies

Description: MOSFET 2N-CH 40V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 54W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V, Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 22µA, Supplier Device Package: PG-TDSON-8-4, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Weitere Produktangebote IPG20N04S4L08ATMA1 nach Preis ab 0.99 EUR bis 2.5 EUR

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IPG20N04S4L08ATMA1 IPG20N04S4L08ATMA1 Hersteller : Infineon Technologies Infineon_IPG20N04S4L_08_DS_v01_00_en-1227280.pdf MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
auf Bestellung 13647 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.5 EUR
10+ 2.04 EUR
100+ 1.6 EUR
500+ 1.36 EUR
1000+ 1.11 EUR
2500+ 1.04 EUR
5000+ 0.99 EUR
Mindestbestellmenge: 2
IPG20N04S4L08ATMA1 IPG20N04S4L08ATMA1 Hersteller : Infineon Technologies Infineon-IPG20N04S4L_08-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf634e6f6c0f Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 39648 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.5 EUR
10+ 2.05 EUR
100+ 1.59 EUR
500+ 1.35 EUR
1000+ 1.1 EUR
2000+ 1.04 EUR
Mindestbestellmenge: 8
IPG20N04S4L08ATMA1 IPG20N04S4L08ATMA1 Hersteller : Infineon Technologies ipg20n04s4l-08_ds_1_0.pdf Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)