IPG20N06S2L35AATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.80 EUR |
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Technische Details IPG20N06S2L35AATMA1 Infineon Technologies
Description: MOSFET 2N-CH 55V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 65W, Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 27µA, Supplier Device Package: PG-TDSON-8-10, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote IPG20N06S2L35AATMA1 nach Preis ab 0.90 EUR bis 3.06 EUR
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IPG20N06S2L35AATMA1 | Hersteller : Infineon Technologies |
MOSFETs MOSFET |
auf Bestellung 4787 Stücke: Lieferzeit 10-14 Tag (e) |
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IPG20N06S2L35AATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 27µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 14676 Stücke: Lieferzeit 10-14 Tag (e) |
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IPG20N06S2L35AATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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IPG20N06S2L35AATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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IPG20N06S2L35AATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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IPG20N06S2L-35AATMA1 | Hersteller : Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W (Tc) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 27µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active |
Produkt ist nicht verfügbar |